IndiumV3, Russie, Analysis, bibRecord, 000976

Magnetic field induced insulating phase in two-dimensional electron gas in InGaAs/InP : The Wigner solid

Identifieur interne : 000976 ( Russie/Analysis ); précédent : 000975; suivant : 000977

Magnetic field induced insulating phase in two-dimensional electron gas in InGaAs/InP : The Wigner solid

Auteurs : RBID : Pascal:01-0325424

Descripteurs français

Pascal (Inist)
- Cristallisation Wigner, Matériau dopé, Dopage modulé, Effet champ magnétique, Effet Hall, Magnétorésistance, Energie activation, Caractéristique courant tension, Hétérostructure, Gaz électron 2 dimensions, Matériau semiconducteur, Indium phosphure, Gallium arséniure, Indium arséniure, Composé binaire, 7320Q, Composé ternaire, Etude expérimentale, InP, In P, In0,53Ga0,47As, Ga In As.

English descriptors

KwdEn :
- Activation energy, Binary compounds, Doped materials, Experimental study, Gallium arsenides, Hall effect, Heterostructures, IV characteristic, Indium arsenides, Indium phosphides, Magnetic field effects, Magnetoresistance, Modulation doping, Semiconductor materials, Ternary compounds, Two-dimensional electron gas, Wigner crystallization.

Abstract

We review the results of our study of the properties of the magnetic field induced insulating phase in a two-dimensional electron gas in modulation-doped In_0.53Ga_0.47As/InP heterostructures. The experiments were performed in the millikelvin range of temperatures in very high magnetic fields. The results can be explained by the assumption of the formation of a glassy Wigner solid.

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Pascal:01-0325424

Le document en format XML

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<author><name sortKey="Podor, B" uniqKey="Podor B">B. Pödör</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, P.O.B. 49</s1>
<s2>1525 Budapest</s2>
<s3>HUN</s3>
<sZ>1 aut.</sZ>
</inist:fA14>
<country>Hongrie</country>
<placeName><settlement type="city">Budapest</settlement>
<region nuts="2">Hongrie centrale</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Kovacs, Gy" uniqKey="Kovacs G">Gy. Kovacs</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Department of General Physics, Eötvös Loránd University</s1>
<s2>Budapest</s2>
<s3>HUN</s3>
<sZ>2 aut.</sZ>
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<country>Hongrie</country>
<placeName><settlement type="city">Budapest</settlement>
<region nuts="2">Hongrie centrale</region>
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</author>
<author><name sortKey="Remenyi, G" uniqKey="Remenyi G">G. Remenyi</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>CNRS Centre de Recherches sur les Tries Basses Températures et Laboratoire des Champs Magnétiques Intenses</s1>
<s2>Grenoble</s2>
<s3>FRA</s3>
<sZ>3 aut.</sZ>
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<country>France</country>
<placeName><region type="région">Rhône-Alpes</region>
<settlement type="city">Grenoble</settlement>
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<author><name sortKey="Savel Ev, I G" uniqKey="Savel Ev I">I. G. Savel Ev</name>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26</s1>
<s2>St. Petersburg, 194021</s2>
<s3>RUS</s3>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
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<country>Russie</country>
<wicri:noRegion>St. Petersburg, 194021</wicri:noRegion>
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<author><name sortKey="Novikov, S V" uniqKey="Novikov S">S. V. Novikov</name>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26</s1>
<s2>St. Petersburg, 194021</s2>
<s3>RUS</s3>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
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<country>Russie</country>
<wicri:noRegion>St. Petersburg, 194021</wicri:noRegion>
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<publicationStmt><idno type="inist">01-0325424</idno>
<date when="2001">2001</date>
<idno type="stanalyst">PASCAL 01-0325424 INIST</idno>
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<seriesStmt><idno type="ISSN">0020-1685</idno>
<title level="j" type="abbreviated">Inorg. mater.</title>
<title level="j" type="main">Inorganic materials</title>
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</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Activation energy</term>
<term>Binary compounds</term>
<term>Doped materials</term>
<term>Experimental study</term>
<term>Gallium arsenides</term>
<term>Hall effect</term>
<term>Heterostructures</term>
<term>IV characteristic</term>
<term>Indium arsenides</term>
<term>Indium phosphides</term>
<term>Magnetic field effects</term>
<term>Magnetoresistance</term>
<term>Modulation doping</term>
<term>Semiconductor materials</term>
<term>Ternary compounds</term>
<term>Two-dimensional electron gas</term>
<term>Wigner crystallization</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Cristallisation Wigner</term>
<term>Matériau dopé</term>
<term>Dopage modulé</term>
<term>Effet champ magnétique</term>
<term>Effet Hall</term>
<term>Magnétorésistance</term>
<term>Energie activation</term>
<term>Caractéristique courant tension</term>
<term>Hétérostructure</term>
<term>Gaz électron 2 dimensions</term>
<term>Matériau semiconducteur</term>
<term>Indium phosphure</term>
<term>Gallium arséniure</term>
<term>Indium arséniure</term>
<term>Composé binaire</term>
<term>7320Q</term>
<term>Composé ternaire</term>
<term>Etude expérimentale</term>
<term>InP</term>
<term>In P</term>
<term>In0,53Ga0,47As</term>
<term>Ga In As</term>
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<front><div type="abstract" xml:lang="en">We review the results of our study of the properties of the magnetic field induced insulating phase in a two-dimensional electron gas in modulation-doped In<sub>0.53</sub>
Ga<sub>0.47</sub>
As/InP heterostructures. The experiments were performed in the millikelvin range of temperatures in very high magnetic fields. The results can be explained by the assumption of the formation of a glassy Wigner solid.</div>
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<fA14 i1="01"><s1>Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, P.O.B. 49</s1>
<s2>1525 Budapest</s2>
<s3>HUN</s3>
<sZ>1 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Department of General Physics, Eötvös Loránd University</s1>
<s2>Budapest</s2>
<s3>HUN</s3>
<sZ>2 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>CNRS Centre de Recherches sur les Tries Basses Températures et Laboratoire des Champs Magnétiques Intenses</s1>
<s2>Grenoble</s2>
<s3>FRA</s3>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="04"><s1>Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26</s1>
<s2>St. Petersburg, 194021</s2>
<s3>RUS</s3>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
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<fA20><s1>439-444</s1>
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<fA21><s1>2001</s1>
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<fA99><s0>Trad. de: Neorganicheskie Meterialy, RU, 2001, 37, 5, 530-535</s0>
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<fC01 i1="01" l="ENG"><s0>We review the results of our study of the properties of the magnetic field induced insulating phase in a two-dimensional electron gas in modulation-doped In<sub>0.53</sub>
Ga<sub>0.47</sub>
As/InP heterostructures. The experiments were performed in the millikelvin range of temperatures in very high magnetic fields. The results can be explained by the assumption of the formation of a glassy Wigner solid.</s0>
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<s5>03</s5>
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<s2>NK</s2>
<s5>15</s5>
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<fC03 i1="13" i2="3" l="FRE"><s0>Gallium arséniure</s0>
<s2>NK</s2>
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<s2>NK</s2>
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<fC03 i1="16" i2="3" l="FRE"><s0>7320Q</s0>
<s2>PAC</s2>
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<s5>56</s5>
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<s5>81</s5>
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<s5>81</s5>
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<s5>83</s5>
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<s5>83</s5>
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<fC03 i1="19" i2="3" l="FRE"><s0>InP</s0>
<s4>INC</s4>
<s5>92</s5>
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<fC03 i1="20" i2="3" l="FRE"><s0>In P</s0>
<s4>INC</s4>
<s5>93</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>In0,53Ga0,47As</s0>
<s4>INC</s4>
<s5>94</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>Ga In As</s0>
<s4>INC</s4>
<s5>95</s5>
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<s5>82</s5>
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<s5>82</s5>
</fC07>
<fN21><s1>225</s1>
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Magnetic field induced insulating phase in two-dimensional electron gas in InGaAs/InP : The Wigner solid

Magnetic field induced insulating phase in two-dimensional electron gas in InGaAs/InP : The Wigner solid

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri